Technical parameters/drain source resistance: 49 mΩ
Technical parameters/dissipated power: 4.2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1006pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 4.2W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDS9435A
|
National Semiconductor | 功能相似 | SOIC |
FAIRCHILD SEMICONDUCTOR NDS9435A. 晶体管, MOSFET, P沟道, 5.3 A, -30 V, 50 mohm, -10 V, -1.7 V
|
||
|
|
ON Semiconductor | 功能相似 | SOIC |
FAIRCHILD SEMICONDUCTOR NDS9435A. 晶体管, MOSFET, P沟道, 5.3 A, -30 V, 50 mohm, -10 V, -1.7 V
|
||
NDS9435A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR NDS9435A. 晶体管, MOSFET, P沟道, 5.3 A, -30 V, 50 mohm, -10 V, -1.7 V
|
||
TPS1100D
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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