Technical parameters/rated voltage (DC): | -30.0 V |
|
Technical parameters/rated current: | -5.30 A |
|
Technical parameters/drain source resistance: | 50.0 mΩ |
|
Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.50 W |
|
Technical parameters/drain source voltage (Vds): | -30.0 V |
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Technical parameters/Leakage source breakdown voltage: | -30.0 V |
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Technical parameters/Continuous drain current (Ids): | 5.30 A |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC |
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Dimensions/Packaging: | SOIC |
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Other/Product Lifecycle: | End of Life |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS5PF30L
|
ST Microelectronics | 功能相似 | SOIC-8 |
P 沟道 STripFET™ 功率 MOSFET,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
||
TPS1100D
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
||
TPS1100DR
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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