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Technical parameters/rated voltage (DC): -15.0 V
Technical parameters/rated current: -1.60 A
Technical parameters/output voltage: -15.0 V
Technical parameters/drain source resistance: 0.18 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 791 mW
Technical parameters/drain source voltage (Vds): 15 V
Technical parameters/Continuous drain current (Ids): -1.60 A
Technical parameters/rise time: 10 ns
Technical parameters/rated power (Max): 791 mW
Technical parameters/descent time: 2 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 791mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TPS1100DG4
|
TI | 类似代替 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
||
TPS1100DR
|
TI | 类似代替 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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