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Model TPS1100DG4
Description Single P-channel Enhanced MOSFETs
Product QR code
Brand: TI
Packaging SOIC-8
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
5.12  yuan 5.12yuan
10+:
$ 6.1392
100+:
$ 5.8322
500+:
$ 5.6276
1000+:
$ 5.6174
2000+:
$ 5.5764
5000+:
$ 5.5253
7500+:
$ 5.4844
10000+:
$ 5.4639
Quantity
10+
100+
500+
1000+
2000+
Price
$6.1392
$5.8322
$5.6276
$5.6174
$5.5764
Price $ 6.1392 $ 5.8322 $ 5.6276 $ 5.6174 $ 5.5764
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9999) Minimum order quantity(10)
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Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 791 mW

Technical parameters/drain source voltage (Vds): 15 V

Technical parameters/Continuous drain current (Ids): 1.6A

Technical parameters/rise time: 10 ns

Technical parameters/descent time: 2 ns

Technical parameters/operating temperature (Max): 125 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 791mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
TPS1100D TPS1100D TI 类似代替 SOIC-8
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1100DR TPS1100DR TI 类似代替 SOIC-8
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

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