Technical parameters/dissipated power: | 2.5W (Ta) |
|
Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/rise time: | 20 ns |
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Technical parameters/Input capacitance (Ciss): | 1800pF @15V(Vds) |
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Technical parameters/descent time: | 46 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.5W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4435DDY-T1-GE3
|
Vishay Intertechnology | 功能相似 |
VISHAY SI4435DDY-T1-GE3 场效应管, P通道, MOSFET, -30V, -8.1A, SOIC-8, 整卷
|
|||
TPS1100D
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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