Technical parameters/dissipated power: 4.2W (Tc)
Technical parameters/Input capacitance (Ciss): 1006pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 4.2W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4403BDY-T1-E3
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
MOSFET P-CH 20V 7.3A 8-SOIC
|
||
SI4403BDY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET P-CH 20V 7.3A 8-SOIC
|
||
SI4403BDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET 20V 9.9A 2.5W 17mohm @ 4.5V
|
||
SI4431CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Trans MOSFET P-CH 30V 7A 8Pin SOIC N T/R
|
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