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Model SI4403BDY-T1-GE3
Description VISHAY SI4403BDY-T1-GE3 Transistor, MOSFET, P-channel, -7.3 A, -20 V, 14 Mohm, -4.5 V, -450 mV
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9383) Minimum order quantity(1)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 14 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.35 W

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 Vishay Semiconductor 功能相似 SOIC-8
VISHAY SI4403CDY-T1-GE3 晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
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SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 Vishay Intertechnology 功能相似
VISHAY SI4403CDY-T1-GE3 晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
PDF
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 Vishay Siliconix 功能相似 SO-8
VISHAY SI4403CDY-T1-GE3 晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
PDF

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