Technical parameters/drain source resistance: 32 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 7A
Technical parameters/Input capacitance (Ciss): 1006pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4403BDY-T1-E3
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
MOSFET P-CH 20V 7.3A 8-SOIC
|
||
SI4403BDY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET P-CH 20V 7.3A 8-SOIC
|
||
SI4403BDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET 20V 9.9A 2.5W 17mohm @ 4.5V
|
||
SI4431CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Trans MOSFET P-CH 30V 7A 8Pin SOIC N T/R
|
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