Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 40.0 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.009 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 80 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rise time: 165 ns
Technical parameters/Input capacitance (Ciss): 1440pF @25V(Vds)
Technical parameters/rated power (Max): 80 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 80W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/width: 6.2 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Power Management, Industrial, Computers&Computer Peripherals
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR FDD6690A 晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0077 ohm, 10 V, 1.9 V
|
||
FDD6690A
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD6690A 晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0077 ohm, 10 V, 1.9 V
|
||
FDD6690A
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD6690A 晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0077 ohm, 10 V, 1.9 V
|
||
FDD8878
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
|
||
FDD8878
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
|
||
IRLR3103TRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.019Ω; ID 55A; D-Pak (TO-252AA); PD 107W
|
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