Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.011 Ω
Technical parameters/dissipated power: 40 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 79 ns
Technical parameters/Input capacitance (Ciss): 880pF @15V(Vds)
Technical parameters/rated power (Max): 40 W
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD8878
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
|
||
FDD8878
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
|
||
IRLR7807ZPBF
|
Infineon | 功能相似 | TO-252-3 |
INFINEON IRLR7807ZPBF 晶体管, MOSFET, N沟道, 40 A, 30 V, 13.8 mohm, 10 V, 1.8 V
|
||
ISL9N315AD3ST
|
Fairchild | 功能相似 | TO-252 |
ISL9N315AD3ST N沟道MOSFET 30V 30A TO-252/D-PAK marking/标记 N315AD 仿真模型/仿真模型
|
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