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Model FDD8878
Description FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.52  yuan 2.52yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7763) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

40.0 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.011 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

40 W

 

Technical parameters/threshold voltage:

1.2 V

 

Technical parameters/Input capacitance:

880 pF

 

Technical parameters/gate charge:

19.0 nC

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

40.0 A

 

Technical parameters/rise time:

79 ns

 

Technical parameters/Input capacitance (Ciss):

880pF @15V(Vds)

 

Technical parameters/rated power (Max):

40 W

 

Technical parameters/descent time:

27 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

40W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.39 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDD8878 FDD8878 Fairchild 功能相似 TO-252-3
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
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FDD8878 FDD8878 ON Semiconductor 功能相似 TO-252-3
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
PDF
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ISL9N315AD3ST ISL9N315AD3ST Fairchild 功能相似 TO-252
ISL9N315AD3ST N沟道MOSFET 30V 30A TO-252/D-PAK marking/标记 N315AD 仿真模型/仿真模型
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