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Model ISL9N315AD3ST
Description ISL9N315AD3ST NChannel MOSFET 30V 30A TO-252/D-PAK Marking/Marking N315AD Simulation Model/Simulation Model
Product QR code
Brand: Fairchild
Packaging TO-252
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.82  yuan 0.82yuan
10+:
$ 1.1084
50+:
$ 1.0509
100+:
$ 1.0098
300+:
$ 0.9852
500+:
$ 0.9606
1000+:
$ 0.9359
2500+:
$ 0.8990
5000+:
$ 0.8908
Quantity
10+
50+
100+
300+
500+
Price
$1.1084
$1.0509
$1.0098
$0.9852
$0.9606
Price $ 1.1084 $ 1.0509 $ 1.0098 $ 0.9852 $ 0.9606
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8581) Minimum order quantity(10)
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Technical parameters/drain source resistance: 28.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 55.0 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 30.0 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252

External dimensions/packaging: TO-252

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDD8878 FDD8878 Fairchild 功能相似 TO-252-3
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
PDF
FDD8878 FDD8878 ON Semiconductor 功能相似 TO-252-3
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
PDF
ISL9N318AD3ST ISL9N318AD3ST Fairchild 类似代替 TO-252
N沟道逻辑电平PWM优化UltraFET沟道功率MOSFET N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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