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Model ISL9N318AD3ST
Description NChannel Logic Level PWM Optimization UltraFET Channel Power MOSFET N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Product QR code
Brand: Fairchild
Packaging TO-252
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1  yuan 1yuan
10+:
$ 1.3446
50+:
$ 1.2749
100+:
$ 1.2251
300+:
$ 1.1952
500+:
$ 1.1653
1000+:
$ 1.1354
2500+:
$ 1.0906
5000+:
$ 1.0807
Quantity
10+
50+
100+
300+
500+
Price
$1.3446
$1.2749
$1.2251
$1.1952
$1.1653
Price $ 1.3446 $ 1.2749 $ 1.2251 $ 1.1952 $ 1.1653
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7238) Minimum order quantity(10)
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Technical parameters/drain source resistance: 18.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 55 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 30.0 A

Technical parameters/descent time: 28 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/Encapsulation: TO-252

External dimensions/packaging: TO-252

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDD8878 FDD8878 Fairchild 功能相似 TO-252-3
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
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FDD8878 FDD8878 ON Semiconductor 功能相似 TO-252-3
FAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
PDF
ISL9N315AD3ST ISL9N315AD3ST Fairchild 类似代替 TO-252
ISL9N315AD3ST N沟道MOSFET 30V 30A TO-252/D-PAK marking/标记 N315AD 仿真模型/仿真模型
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