Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0077 Ω
Technical parameters/dissipated power: 3.3 W
Technical parameters/threshold voltage: 1.9 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 1230pF @15V(Vds)
Technical parameters/rated power (Max): 1.5 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 56 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Motor drive and control, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD60N02RT4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
62A,25V功率MOSFET
|
||
STD40NF03LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD40NF03LT4 晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
|
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