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Model FDD6690A
Description FAIRCHILD SEMICONDUCTOR FDD6690A Transistor, MOSFET, N-channel, 46 A, 30 V, 0.0077 ohm, 10 V, 1.9 V
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.5  yuan 2.5yuan
5+:
$ 3.3804
25+:
$ 3.1300
50+:
$ 2.9547
100+:
$ 2.8796
500+:
$ 2.8295
2500+:
$ 2.7669
5000+:
$ 2.7419
10000+:
$ 2.7043
Quantity
5+
25+
50+
100+
500+
Price
$3.3804
$3.1300
$2.9547
$2.8796
$2.8295
Price $ 3.3804 $ 3.1300 $ 2.9547 $ 2.8796 $ 2.8295
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3680) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 46.0 A

Technical parameters/number of channels: 1

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.0077 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 50 W

Technical parameters/threshold voltage: 1.9 V

Technical parameters/input capacitance: 1.23 nF

Technical parameters/gate charge: 13.0 nC

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 46.0 A

Technical parameters/rise time: 7 ns

Technical parameters/Input capacitance (Ciss): 1230pF @15V(Vds)

Technical parameters/rated power (Max): 1.5 W

Technical parameters/descent time: 12 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3.3W (Ta), 56W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD60N02RT4G NTD60N02RT4G ON Semiconductor 类似代替 TO-252-3
62A,25V功率MOSFET
PDF
STD40NF03LT4 STD40NF03LT4 ST Microelectronics 功能相似 TO-252-3
STMICROELECTRONICS STD40NF03LT4 晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
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