Technical parameters/drain source resistance: 0.037 Ω
Technical parameters/dissipated power: 19 W
Technical parameters/threshold voltage: 350 mV
Technical parameters/Input capacitance (Ciss): 2300pF @4V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.5W (Ta), 19W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 类似代替 | PowerPAK® SC-70-6 单 |
MOSFET P-CH 8V 12A SC70-6
|
||
SIA417DJ-T1-GE3
|
Vishay Semiconductor | 类似代替 | 6 |
MOSFET P-CH 8V 12A SC70-6
|
||
SIA427DJ-T1-GE3
|
Vishay Semiconductor | 功能相似 | SC-70 |
表面贴装型-P-通道-8V-12A(Tc)-3.5W(Ta)-19W(Tc)-PowerPAK®-SC-70-6-单
|
||
SIA427DJ-T1-GE3
|
Vishay Intertechnology | 功能相似 | PowerPAK-SC70-6 |
表面贴装型-P-通道-8V-12A(Tc)-3.5W(Ta)-19W(Tc)-PowerPAK®-SC-70-6-单
|
||
SIA427DJ-T1-GE3
|
VISHAY | 功能相似 | SC-70-6 |
表面贴装型-P-通道-8V-12A(Tc)-3.5W(Ta)-19W(Tc)-PowerPAK®-SC-70-6-单
|
||
SIA427DJ-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-70-6 |
表面贴装型-P-通道-8V-12A(Tc)-3.5W(Ta)-19W(Tc)-PowerPAK®-SC-70-6-单
|
||
SUD09P10-195-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD45P03-09-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD45P03-09-GE3
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review