Encapsulation parameters/Encapsulation: ChipFET
External dimensions/packaging: ChipFET
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single Dual Drain
Other/Case/Package: ChipFET
Other/Soft 랜イ동터극동: N and P-Channel
Other/ハ레イ?동항복압: 30 V
Other/Link Files 레イ류: 2.9 A
Other/력발산: 1100 mW
Other/저항 Drain Source RDS (on): 0.085 Ohm @ 10 V Ohm @ N Channel
Other/Typical 하강: 7 ns @ N Channel
Other/Typical 상승: 12 ns @ N Channel
Other/표준오프い Contact Us: 12 ns @ N Channel
Other/ị동: REEL
Other/게イSoft - ?동항복압: /- 20 V
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504BDC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
||
SI5504BDC-T1-GE3
|
VISHAY | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
||
SI5504BDC-T1-GE3
|
Vishay Semiconductor | 完全替代 | ChipFET-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
||
SI5504DC
|
Vishay Semiconductor | 功能相似 | SOT-23-8 |
Complementary 30V (D-S) MOSFET
|
||
|
SI5504DC-T1-GE3
|
VISHAY | 完全替代 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
|||
SI5504DC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
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