Encapsulation parameters/installation method: Surface Mount
Other/FET types: N+P-Channel
Other/Rds On (Max) @ Id, Vgs: 85 mOhms @ 2.9A,10V
Other/continuous drain current Id: 2.9A,2.1A
Other/drain source voltage Vds: 30V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: 8-SMD,Flat Lead
Other/Vgs (th): 1V @ 250uA(Minimum)
Other/Pd - power dissipation (Max): 1.1W
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504DC
|
Vishay Semiconductor | 完全替代 | SOT-23-8 |
Complementary 30V (D-S) MOSFET
|
||
|
SI5504DC-T1
|
Vishay Siliconix | 完全替代 |
Transistor,
|
|||
|
SI5504DC-T1
|
VISHAY | 完全替代 | CHIP |
Transistor,
|
||
SI5504DC-T1-E3
|
Vishay Semiconductor | 完全替代 | 1206 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
SI5504DC-T1-E3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
|
|
Vishay Intertechnology | 完全替代 | CHIPFET |
MOSFET N/P-CH 30V 2.9A 1206-8
|
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