Technical parameters/drain source resistance: 85.0 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.10 W
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -3.90 A to 3.90 A
Encapsulation parameters/installation method: Surface Mount
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504DC
|
Vishay Semiconductor | 完全替代 | SOT-23-8 |
Complementary 30V (D-S) MOSFET
|
||
SI5504DC-T1-E3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
SI5504DC-T1-E3
|
Vishay Siliconix | 功能相似 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
|
|
Vishay Intertechnology | 功能相似 | CHIPFET |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
SI5504DC-T1-GE3
|
VISHAY | 完全替代 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
|||
SI5504DC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
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