Technical parameters/drain source resistance: 85 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 2.1 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.10 A
Technical parameters/rated power (Max): 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504BDC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
||
SI5504BDC-T1-GE3
|
VISHAY | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
||
SI5504BDC-T1-GE3
|
Vishay Semiconductor | 完全替代 | ChipFET-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
||
SI5504DC
|
Vishay Semiconductor | 功能相似 | SOT-23-8 |
Complementary 30V (D-S) MOSFET
|
||
|
SI5504DC-T1-GE3
|
VISHAY | 完全替代 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
|||
SI5504DC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
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