Technical parameters/drain source resistance: 53mΩ,112mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/threshold voltage: 1.5V ~ 3V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 3.7A
Technical parameters/Input capacitance (Ciss): 220pF @15V(Vds)
Technical parameters/rated power (Max): 3.12W, 3.1W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504BDC-T1-E3
|
Vishay Siliconix | 完全替代 | SMD-8 |
SI5504BDC-T1-E3 N/P-channel MOSFET Transistor, 3.7A, 4A, 30V, 8Pin 1206
|
||
SI5504BDC-T1-E3
|
VISHAY | 完全替代 | 1206 |
SI5504BDC-T1-E3 N/P-channel MOSFET Transistor, 3.7A, 4A, 30V, 8Pin 1206
|
||
SI5504DC-T1-E3
|
Vishay Semiconductor | 完全替代 | 1206 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
SI5504DC-T1-E3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
|
|
Vishay Intertechnology | 完全替代 | CHIPFET |
MOSFET N/P-CH 30V 2.9A 1206-8
|
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