Technical parameters/drain source resistance: 53mΩ,112mΩ
Technical parameters/polarity: N+P
Technical parameters/dissipated power: 1.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 4A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation (metric): 3216
Encapsulation parameters/Encapsulation: 1206
External dimensions/length: 3.2 mm
External dimensions/width: 1.6 mm
Dimensions/Packaging (Metric): 3216
External dimensions/packaging: 1206
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504BDC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
||
SI5504BDC-T1-GE3
|
VISHAY | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
||
SI5504BDC-T1-GE3
|
Vishay Semiconductor | 完全替代 | ChipFET-8 |
MOSFET N/P-CH 30V 4A 1206-8
|
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