Technical parameters/number of channels: | 2 |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Input capacitance (Ciss): | 220pF @15V(Vds) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SMD-8 |
|
Dimensions/Packaging: | SMD-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504BDC-T1-E3
|
Vishay Siliconix | 完全替代 | SMD-8 |
SI5504BDC-T1-E3 N/P-channel MOSFET Transistor, 3.7A, 4A, 30V, 8Pin 1206
|
||
SI5504BDC-T1-E3
|
VISHAY | 完全替代 | 1206 |
SI5504BDC-T1-E3 N/P-channel MOSFET Transistor, 3.7A, 4A, 30V, 8Pin 1206
|
||
SI5504DC-T1-E3
|
Vishay Semiconductor | 完全替代 | 1206 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
SI5504DC-T1-E3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
|
|
Vishay Intertechnology | 完全替代 | CHIPFET |
MOSFET N/P-CH 30V 2.9A 1206-8
|
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