Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rated power (Max): 1.1 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504DC
|
Vishay Semiconductor | 完全替代 | SOT-23-8 |
Complementary 30V (D-S) MOSFET
|
||
SI5504DC-T1
|
Vishay Siliconix | 完全替代 |
Transistor,
|
|||
SI5504DC-T1
|
VISHAY | 完全替代 | CHIP |
Transistor,
|
||
SI5504DC-T1-E3
|
Vishay Semiconductor | 完全替代 | 1206 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
SI5504DC-T1-E3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
|
|
Vishay Intertechnology | 完全替代 | CHIPFET |
MOSFET N/P-CH 30V 2.9A 1206-8
|
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