Technical parameters/polarity: N+P
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 2.9A/2.1A
Encapsulation parameters/Encapsulation: Chip
External dimensions/packaging: Chip
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5504DC
|
Vishay Semiconductor | 完全替代 | SOT-23-8 |
Complementary 30V (D-S) MOSFET
|
||
SI5504DC-T1-E3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
SI5504DC-T1-E3
|
Vishay Siliconix | 功能相似 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
|
|
Vishay Intertechnology | 功能相似 | CHIPFET |
MOSFET N/P-CH 30V 2.9A 1206-8
|
||
SI5504DC-T1-GE3
|
VISHAY | 完全替代 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
|||
SI5504DC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N/P-CH 30V 2.9A 1206-8
|
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