Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: 1206
External dimensions/packaging: 1206
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4410DYTRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI4410DYTRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI5402BDC-T1-GE3
|
Vishay Intertechnology | 完全替代 | 1206 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
|
||
SI5402BDC-T1-GE3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
|
||
SI5402BDC-T1-GE3
|
Vishay Semiconductor | 完全替代 | 1206 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
|
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