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Model SI5402BDC-T1-GE3
Description VISHAY SI5402BDC-T1-GE3 Field effect transistor, MOSFET, N-channel, 30V, 6.1A
Product QR code
Brand: Vishay Semiconductor
Packaging 1206
Delivery time
Packaging method
Standard packaging quantity 1
2.75  yuan 2.75yuan
5+:
$ 3.7179
25+:
$ 3.4425
50+:
$ 3.2497
100+:
$ 3.1671
500+:
$ 3.1120
2500+:
$ 3.0432
5000+:
$ 3.0156
10000+:
$ 2.9743
Quantity
5+
25+
50+
100+
500+
Price
$3.7179
$3.4425
$3.2497
$3.1671
$3.1120
Price $ 3.7179 $ 3.4425 $ 3.2497 $ 3.1671 $ 3.1120
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7323) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.042 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.3 W

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 6.10 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation (metric): 3216

Encapsulation parameters/Encapsulation: 1206

External dimensions/length: 3.2 mm

External dimensions/width: 1.6 mm

Dimensions/Packaging (Metric): 3216

External dimensions/packaging: 1206

Compliant with standards/RoHS standards: RoHS Compliant

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