Technical parameters/drain source resistance: 35.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -6.70 A to 6.70 A
Package parameters/number of pins: 8
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4410DYTRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI4410DYTRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI5402BDC-T1-GE3
|
Vishay Intertechnology | 完全替代 | 1206 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
|
||
SI5402BDC-T1-GE3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
|
||
SI5402BDC-T1-GE3
|
Vishay Semiconductor | 完全替代 | 1206 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
|
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