Technical parameters/drain source resistance: 42 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 6.10 A
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1206
External dimensions/packaging: 1206
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4410DYTRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI4410DYTRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI5402DC-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 30V 4.9A 1206-8
|
|||
SI5402DC-T1-E3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET N-CH 30V 4.9A 1206-8
|
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