Technical parameters/drain source resistance: 0.022 Ω
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 855pF @20V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4288DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4288DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4288DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4942DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-GE3
|
VISHAY | 类似代替 | SOIC |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH DUAL 40V 8-SOIC
|
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