Technical parameters/polarity: Dual N-Channel
Technical parameters/drain source voltage (Vds): 40.0 V
Technical parameters/Continuous drain current (Ids): 5.30 A
Package parameters/number of pins: 8
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4288DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4288DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4288DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4910DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 40V 6A 8Pin SOIC N T/R
|
||
SI4942DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N-CH DUAL 40V 8-SOIC
|
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