Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0165 Ω
Technical parameters/polarity: Dual N
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 9.2A
Technical parameters/Input capacitance (Ciss): 580pF @20V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power management, industrial, computer and computer peripherals
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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|---|---|---|---|---|---|---|
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SI4286DY-T1-GE3
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SI4942DY-T1-E3
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Vishay Semiconductor | 类似代替 | SOIC |
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Vishay Siliconix | 类似代替 | SOIC-8 |
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|
VISHAY | 类似代替 | SOIC |
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SI4942DY-T1-GE3
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Vishay Semiconductor | 类似代替 |
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