Technical parameters/drain source resistance: 0.027 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2.9 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rise time: 60 ns
Technical parameters/Input capacitance (Ciss): 375pF @20V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.9 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4288DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
双N沟道40 V （D -S ）的MOSFET Dual N-Channel 40 V (D-S) MOSFET
|
||
SI4288DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
双N沟道40 V （D -S ）的MOSFET Dual N-Channel 40 V (D-S) MOSFET
|
||
SI4288DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
双N沟道40 V （D -S ）的MOSFET Dual N-Channel 40 V (D-S) MOSFET
|
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