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Model SI4288DY-T1-GE3
Description VISHAY SI4288DY-T1-GE3 Dual Field Effect Transistor, MOSFET, Dual N-channel, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
5.46  yuan 5.46yuan
10+:
$ 6.5496
100+:
$ 6.2221
500+:
$ 6.0038
1000+:
$ 5.9929
2000+:
$ 5.9492
5000+:
$ 5.8946
7500+:
$ 5.8510
10000+:
$ 5.8291
Quantity
10+
100+
500+
1000+
2000+
Price
$6.5496
$6.2221
$6.0038
$5.9929
$5.9492
Price $ 6.5496 $ 6.2221 $ 6.0038 $ 5.9929 $ 5.9492
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6334) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0165 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 3.1 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/descent time: 8 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Cut Tape (CT)

Other/Manufacturing Applications: Industrial, Power Management, Computers & Computer Peripherals

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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