Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 5.3A
Technical parameters/rise time: 10 ns
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4288DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4288DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4288DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Dual N-Channel 40V 20mOhm 2W Surface Mount TrenchFET Mosfet - SOIC-8
|
||
SI4910DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 40V 6A 8Pin SOIC N T/R
|
||
SI4942DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH DUAL 40V 8-SOIC
|
||
SI4942DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N-CH DUAL 40V 8-SOIC
|
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