Technical parameters/dissipated power: 2.5W (Ta), 6W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 600pF @50V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 6W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7474PBF
|
Infineon | 功能相似 | SOIC |
INFINEON IRF7474PBF 晶体管, MOSFET, N沟道, 4.5 A, 100 V, 63 mohm, 10 V, 5.5 V
|
||
SI4104DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
N 通道 MOSFET,100V 至 150V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
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|
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET 2N-CH 30V 8A 8-SOIC
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SI4622DY-T1-GE3
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MOSFET 2N-CH 30V 8A 8-SOIC
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|
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|
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SI9407BDY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
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|
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