Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.4 W
Technical parameters/threshold voltage: 3 V
Technical parameters/input capacitance: 600 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): -4.70 A
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 600pF @30V(Vds)
Technical parameters/rated power (Max): 5 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4388DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET DUAL N-CH 30V 8-SOIC
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SI4388DY-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET DUAL N-CH 30V 8-SOIC
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|
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET 2N-CH 30V 8A 8-SOIC
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SI4622DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | 8 |
MOSFET 2N-CH 30V 8A 8-SOIC
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