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Model SI4104DY-T1-GE3
Description N Channel MOSFET, 100V to 150V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
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Brand: VISHAY
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4478) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5.00 W

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 3.2A

Technical parameters/rise time: 9 ns

Technical parameters/Input capacitance (Ciss): 446pF @50V(Vds)

Technical parameters/descent time: 8 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta), 5W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.55 mm

External dimensions/packaging: SOIC-8

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4100DY-T1-GE3 SI4100DY-T1-GE3 Vishay Semiconductor 类似代替 SOIC
N 通道 MOSFET，100V 至 150V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
PDF
SI4100DY-T1-GE3 SI4100DY-T1-GE3 Vishay Siliconix 类似代替 SOIC-8
N 通道 MOSFET，100V 至 150V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
PDF

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