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Model SI9407BDY-T1-GE3
Description MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 150mohm, Id 4.7A, SO-8, Pd 5W
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
3.7  yuan 3.7yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4964) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.15 Ω

 

Technical parameters/dissipated power:

5 W

 

Technical parameters/Input capacitance (Ciss):

600pF @30V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2.4W (Ta), 5W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

3.9 mm

 

Dimensions/Height:

1.75 mm

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Cut Tape (CT)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4388DY-T1-GE3 SI4388DY-T1-GE3 Vishay Siliconix 功能相似 SOIC-8
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PDF
SI4388DY-T1-GE3 SI4388DY-T1-GE3 Vishay Semiconductor 功能相似
MOSFET DUAL N-CH 30V 8-SOIC
PDF
SI4622DY-T1-GE3 SI4622DY-T1-GE3 VISHAY 功能相似 SOIC-8
MOSFET 2N-CH 30V 8A 8-SOIC
SI4622DY-T1-GE3 SI4622DY-T1-GE3 Vishay Semiconductor 功能相似 8
MOSFET 2N-CH 30V 8A 8-SOIC
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