Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 4.50 A
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 63 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF7474
Technical parameters/threshold voltage: 5.5 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 4.50 A
Technical parameters/rise time: 7.9 ns
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/descent time: 5.9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4100DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
N 通道 MOSFET，100V 至 150V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
SI4100DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
N 通道 MOSFET，100V 至 150V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
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