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Model SI2351DS-T1-GE3
Description MOSFET 20V 3A 2.1W 115mohms @ 4.5V
Product QR code
Brand: Vishay Siliconix
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3368) Minimum order quantity(1)
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Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1W (Ta), 2.1W (Tc)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): -3.00 A

Technical parameters/Input capacitance (Ciss): 250pF @10V(Vds)

Technical parameters/dissipated power (Max): 1W (Ta), 2.1W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/packaging: SOT-23-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2301BDS-T1-E3 SI2301BDS-T1-E3 Vishay Dale 类似代替
MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
SI2301BDS-T1-E3 SI2301BDS-T1-E3 Vishay Siliconix 类似代替 SOT-23-3
MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
PDF
SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 Vishay Siliconix 类似代替 SOT-23-3
Trans MOSFET P-CH 20V 2.2A 3Pin TO-236 T/R
PDF
SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 VISHAY 类似代替 SOT-23-3
Trans MOSFET P-CH 20V 2.2A 3Pin TO-236 T/R
PDF
SI2351DS-T1-E3 SI2351DS-T1-E3 Vishay Semiconductor 类似代替 TO-236
MOSFET P-CH 20V 2.8A SOT23-3
PDF

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