Technical parameters/drain source resistance: | 80 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 700 mW |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Continuous drain current (Ids): | -2.20 A |
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Technical parameters/rise time: | 40 ns |
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Technical parameters/Input capacitance (Ciss): | 375pF @6V(Vds) |
|
Technical parameters/descent time: | 20 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 700mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.6 mm |
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Dimensions/Height: | 1.45 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AO3413
|
Alpha & Omega Semiconductor | 功能相似 | SOT-23-3 |
P沟道,-20V,-3A,80mΩ@-4.5V
|
||
AO3413
|
Alpha | 功能相似 |
P沟道,-20V,-3A,80mΩ@-4.5V
|
|||
|
|
KUU | 功能相似 | SOT-23-3L |
-20V,-2A,P沟道MOSFET
|
||
SI2301BDS-T1-E3
|
Vishay Dale | 类似代替 |
MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
|
|||
SI2301BDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
|
||
SI2351DS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
MOSFET P-CH 20V 2.8A SOT23-3
|
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