Technical parameters/drain source resistance: 0.15 Ω
Technical parameters/dissipated power: 0.7 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 375pF @6V(Vds)
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 700mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2301BDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET P-CH 20V 2.2A 3Pin TO-236 T/R
|
||
SI2301BDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET P-CH 20V 2.2A 3Pin TO-236 T/R
|
||
SI2351DS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
MOSFET P-CH 20V 2.8A SOT23-3
|
||
SI2351DS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET 20V 3A 2.1W 115mohms @ 4.5V
|
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