Technical parameters/drain source resistance: 80 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 0.9 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 2.2A
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 375pF @6V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 900 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AO3413
|
Alpha & Omega Semiconductor | 功能相似 | SOT-23-3 |
P沟道,-20V,-3A,80mΩ@-4.5V
|
||
AO3413
|
Alpha | 功能相似 |
P沟道,-20V,-3A,80mΩ@-4.5V
|
|||
|
|
KUU | 功能相似 | SOT-23-3L |
-20V,-2A,P沟道MOSFET
|
||
SI2301BDS-T1-E3
|
Vishay Dale | 类似代替 |
MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
|
|||
SI2301BDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V
|
||
SI2351DS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
MOSFET P-CH 20V 2.8A SOT23-3
|
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