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Model SI2351DS-T1-E3
Description VISHAY SI2351DS-T1-E3 Transistor, MOSFET, P-channel, -2.8 A, -20 V, 0.092 ohm, -4.5 V, -600 mV
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Brand: Vishay Semiconductor
Packaging TO-236
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6391) Minimum order quantity(1)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.092 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1 W

Technical parameters/drain source voltage (Vds): -20.0 V

Technical parameters/Continuous drain current (Ids): -3.00 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-236

External dimensions/packaging: TO-236

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 Vishay Semiconductor 功能相似 SOT-23
P 通道 MOSFET，8V 至 20V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
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