SI2301CDS-T1-GE3 In Stock|PDF|Datasheet|Price|Agent[SI2301CDS-T1-GE3 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model SI2301CDS-T1-GE3

Description P 通道 MOSFET，8V 至 20V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor

Brand: Vishay Semiconductor

Packaging SOT-23

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Technical parameters/rated power:	1.6 W
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.142 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	1.6 W
Technical parameters/drain source voltage (Vds):	-20.0 V
Technical parameters/Continuous drain current (Ids):	-3.10 A
Technical parameters/rise time:	35 ns
Technical parameters/Input capacitance (Ciss):	405pF @10V(Vds)
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	860 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23
Dimensions/Length:	3.04 mm
Dimensions/Width:	1.4 mm
Dimensions/Height:	1.02 mm
Dimensions/Packaging:	SOT-23
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
SI2301BDS-T1-E3	Vishay Dale	类似代替		VISHAY SI2301BDS-T1-E3 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
SI2301BDS-T1-E3	Vishay Siliconix	类似代替	SOT-23-3	VISHAY SI2301BDS-T1-E3 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV	PDF
SI2301BDS-T1-GE3	Vishay Siliconix	类似代替	SOT-23-3	P沟道2.5 V （G -S ）的MOSFET P-Channel 2.5 V (G-S) MOSFET	PDF
SI2301BDS-T1-GE3	VISHAY	类似代替	SOT-23-3	P沟道2.5 V （G -S ）的MOSFET P-Channel 2.5 V (G-S) MOSFET	PDF