Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 1.00 A
Technical parameters/rated power: 1.3 W
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.54 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 1.00 A
Technical parameters/rise time: 47 ns
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 1.3 W
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.3 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/length: 5 mm
External dimensions/width: 6.29 mm
External dimensions/height: 3.37 mm
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLD110
|
IRF | 功能相似 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRLD110
|
Vishay Siliconix | 功能相似 | HexDIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRLD110PBF
|
Vishay Siliconix | 功能相似 | DIP-4 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
|
||
IRLD110PBF
|
Vishay Precision Group | 功能相似 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
|
|||
IRLD110PBF
|
VISHAY | 功能相似 | DIP-4 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
|
||
IRLD120PBF
|
Vishay Semiconductor | 类似代替 | DIP |
功率MOSFET Power MOSFET
|
||
IRLD120PBF
|
VISHAY | 类似代替 | DIP-4 |
功率MOSFET Power MOSFET
|
||
IRLD120PBF
|
Vishay Intertechnology | 类似代替 | DIP |
功率MOSFET Power MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review