Technical parameters/dissipated power: | 1300 mW |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/rise time: | 47 ns |
|
Technical parameters/Input capacitance (Ciss): | 250pF @25V(Vds) |
|
Technical parameters/descent time: | 17 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.3W (Ta) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | DIP-4 |
|
Dimensions/Packaging: | DIP-4 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLD110
|
IRF | 功能相似 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRLD110
|
Vishay Siliconix | 功能相似 | HexDIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRLD110PBF
|
Vishay Siliconix | 功能相似 | DIP-4 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
|
||
IRLD110PBF
|
Vishay Precision Group | 功能相似 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
|
|||
IRLD110PBF
|
VISHAY | 功能相似 | DIP-4 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
|
||
IRLD120PBF
|
Vishay Semiconductor | 类似代替 | DIP |
功率MOSFET Power MOSFET
|
||
IRLD120PBF
|
VISHAY | 类似代替 | DIP-4 |
功率MOSFET Power MOSFET
|
||
IRLD120PBF
|
Vishay Intertechnology | 类似代替 | DIP |
功率MOSFET Power MOSFET
|
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