Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: HexDIP-4
External dimensions/packaging: HexDIP-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLD110PBF
|
Vishay Siliconix | 功能相似 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRLD110PBF
|
Vishay Precision Group | 功能相似 |
MOSFET N-CH 100V 1A 4-DIP
|
|||
IRLD110PBF
|
VISHAY | 功能相似 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
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