Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 1.30 A
Technical parameters/rated power: 1.3 W
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.27 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/threshold voltage: 2 V
Technical parameters/input capacitance: 490pF @25V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 1.30 A
Technical parameters/rise time: 64.0 ns
Technical parameters/Input capacitance (Ciss): 490pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.3 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/length: 5 mm
External dimensions/width: 6.29 mm
External dimensions/height: 3.37 mm
External dimensions/packaging: DIP
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLD110PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
N 通道 MOSFET,100V 至 150V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRLD110PBF
|
Vishay Precision Group | 类似代替 |
N 通道 MOSFET,100V 至 150V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
|||
IRLD110PBF
|
VISHAY | 类似代替 | DIP-4 |
N 通道 MOSFET,100V 至 150V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRLD120
|
International Rectifier | 功能相似 |
MOSFET N-CH 100V 1.3A 4-DIP
|
|||
IRLD120
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 100V 1.3A 4-DIP
|
|||
IRLD120
|
VISHAY | 功能相似 | DIP-4 |
MOSFET N-CH 100V 1.3A 4-DIP
|
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